Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects

Autor: Chauhan, Yogesh Singh, Anghel, Costin, Krummenacher, Francois, Maier, Christian, Gillon, Renaud, Bakeroot, Benoit, Desoete, Bart, Frere, Steven, Desormeaux, Andre Baguenier, Sharma, Abhinav, Declercq, Michel, Ionescu, Adrian Mihai
Zdroj: In Solid State Electronics November-December 2006 50(11-12):1801-1813
Databáze: ScienceDirect