Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction
| Autor: | Zhu, Shiyang, Li, M.F. |
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| Zdroj: | In Solid State Electronics July-August 2006 50(7-8):1337-1340 |
| Databáze: | ScienceDirect |
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