Gate line edge roughness amplitude and frequency variation effects on intra die MOS device characteristics
| Autor: | Hamadeh, Emad, Gunther, Norman G., Niemann, Darrell, Rahman, Mahmud |
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| Zdroj: | In Solid State Electronics 2006 50(6):1156-1163 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect