Annealing of ion-implanted SiC by laser-pulse-exposure-generated shock-waves

Autor: Mulpuri, K.B., Qadri, S.B., Grun, J., Manka, C.K., Ridgway, M.C.
Zdroj: In Solid State Electronics 2006 50(6):1035-1040
Databáze: ScienceDirect