Performance and physics of sub-50 nm strained Si on Si 1− xGe x-on-insulator (SGOI) nMOSFETs
| Autor: | Andrieu, F., Ernst, T., Faynot, O., Rozeau, O., Bogumilowicz, Y., Hartmann, J.-M., Brévard, L., Toffoli, A., Lafond, D., Ghyselen, B., Fournel, F., Ghibaudo, G., Deleonibus, S. |
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| Zdroj: | In Solid State Electronics 2006 50(4):566-572 |
| Databáze: | ScienceDirect |
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