Fabrication of poly-Si TFT with silicided Schottky barrier source/drain, high-κ gate dielectric and metal gate

Autor: Zhu, Shiyang, Singh, J., Zhu, Chunxiang, Du, A., Li, M.F.
Zdroj: In Solid State Electronics 2006 50(2):232-236
Databáze: ScienceDirect