Fabrication of poly-Si TFT with silicided Schottky barrier source/drain, high-κ gate dielectric and metal gate
Autor: | Zhu, Shiyang, Singh, J., Zhu, Chunxiang, Du, A., Li, M.F. |
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Zdroj: | In Solid State Electronics 2006 50(2):232-236 |
Databáze: | ScienceDirect |
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