A modified transferred-electron high-field mobility model for GaN devices simulation
| Autor: | Turin, Valentin O. |
|---|---|
| Zdroj: | In Solid State Electronics 2005 49(10):1678-1682 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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| Autor: | Turin, Valentin O. |
|---|---|
| Zdroj: | In Solid State Electronics 2005 49(10):1678-1682 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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Full Text from ScienceDirect