N-channel MOSFETs fabricated on He-implanted and annealed SiGe buffer layers
| Autor: | Mooney, P.M., Rim, K., Christiansen, S.H., Chan, K.K., Chu, J.O., Cai, J., Chen, H., Jordan-Sweet, J.L., Yang, Y.Y., Boyd, D.C. |
|---|---|
| Zdroj: | In Solid State Electronics 2005 49(10):1669-1673 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect