Two-dimensional DC simulation methodology for InP/GaAs0.51Sb0.49/InP heterojunction bipolar transistor

Autor: Maneux, C., Belhaj, M., Grandchamp, B., Labat, N., Touboul, A.
Zdroj: In Solid State Electronics June 2005 49(6):956-964
Databáze: ScienceDirect