Two-dimensional DC simulation methodology for InP/GaAs0.51Sb0.49/InP heterojunction bipolar transistor
Autor: | Maneux, C., Belhaj, M., Grandchamp, B., Labat, N., Touboul, A. |
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Zdroj: | In Solid State Electronics June 2005 49(6):956-964 |
Databáze: | ScienceDirect |
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