Interface trap properties of thermally oxidized n-type 4H–SiC and 6H–SiC
| Autor: | Rudenko, T.E., Osiyuk, I.N., Tyagulski, I.P., Ólafsson, H.Ö., Sveinbjörnsson, E.Ö. |
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| Zdroj: | In Solid State Electronics 2005 49(4):545-553 |
| Databáze: | ScienceDirect |
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