Theoretical study of the influence of strain and polarization on performance of AlGaN/4H-SiC HBT

Autor: Mastro, M.A. *, Eddy, C.R., Jr., Bassim, N.D., Twigg, M.E., Edwards, A., Henry, R.L., Holm, R.H.
Zdroj: In Solid State Electronics 2005 49(2):251-256
Databáze: ScienceDirect