Theoretical study of the influence of strain and polarization on performance of AlGaN/4H-SiC HBT
Autor: | Mastro, M.A. *, Eddy, C.R., Jr., Bassim, N.D., Twigg, M.E., Edwards, A., Henry, R.L., Holm, R.H. |
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Zdroj: | In Solid State Electronics 2005 49(2):251-256 |
Databáze: | ScienceDirect |
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