Structural and electrical characterization of Al 2O 3/HfO 2/Al 2O 3 on strained SiGe

Autor: Wu, D. *, Lu, J., Vainonen-Ahlgren, E., Tois, E., Tuominen, M., Östling, M., Zhang, S.-L.
Zdroj: In Solid State Electronics 2005 49(2):193-197
Databáze: ScienceDirect