Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode
| Autor: | Zhu, Shiyang, Yu, H.Y., Chen, J.D., Whang, S.J., Chen, J.H., Shen, Chen, Zhu, Chunxiang, Lee, S.J., Li, M.F., Chan, D.S.H., Yoo, W.J., Du, Anyan, Tung, C.H., Singh, Jagar, Chin, Albert, Kwong, D.L. |
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| Zdroj: | In Solid State Electronics 2004 48(10):1987-1992 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect