Quarter micron BiCMOS technology platform with implanted-base- or SiGe-bipolar transistor for wireless communication ICs
| Autor: | Tilke, Armin T., Rothenhäußer, Steffen, Rochel, Markus, Stahrenberg, Knut, Goller, Klaus, Junge, Axel, Pribil, Andreas, Föste, Bernd, Wiedemann, Jörg, Tegeler, Martin, Berkner, Jörg, Wagner, Cajetan, Dahl, Claus |
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| Zdroj: | In Solid State Electronics December 2004 48(12):2243-2249 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect