Comparison of sub-micron Si:SiGe heterojunction nFETs to Si nMOSFET in present-day technologies

Autor: Fobelets, K., Jeamsaksiri, W., Papavasilliou, C., Vilches, T., Gaspari, V., Velazquez-Perez, J.E., Michelakis, K., Hackbarth, T., König, U.
Zdroj: In Solid State Electronics 2004 48(8):1401-1406
Databáze: ScienceDirect