Short-channel effects in the Lorentzian noise induced by the EVB tunneling in partially-depleted SOI MOSFETs

Autor: Lukyanchikova, N. a, Garbar, N. a, Smolanka, A. a, Simoen, E. b, ∗, Mercha, A. b, Claeys, C. b, c
Zdroj: In Solid State Electronics 2004 48(5):747-758
Databáze: ScienceDirect