Short-channel effects in the Lorentzian noise induced by the EVB tunneling in partially-depleted SOI MOSFETs
Autor: | Lukyanchikova, N. a, Garbar, N. a, Smolanka, A. a, Simoen, E. b, ∗, Mercha, A. b, Claeys, C. b, c |
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Zdroj: | In Solid State Electronics 2004 48(5):747-758 |
Databáze: | ScienceDirect |
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