A doping concentration-dependent upper limit of the breakdown voltage–cutoff frequency product in Si bipolar transistors

Autor: Rieh, Jae-Sung, Jagannathan, Basanth, Greenberg, David, Freeman, Greg, Subbanna, Seshadri
Zdroj: In Solid State Electronics 2004 48(2):339-343
Databáze: ScienceDirect