Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors
| Autor: | Hwang, Jeonghyun, Schaff, William J., Green, Bruce M., Cha, Hoyoung, Eastman, Lester F. |
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| Zdroj: | In Solid State Electronics 2004 48(2):363-366 |
| Databáze: | ScienceDirect |
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