Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors
| Autor: | Pala, N., Rumyantsev, S., Shur, M., Gaska, R., Hu, X., Yang, J., Simin, G., Khan, M.A. |
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| Zdroj: | In Solid State Electronics 2003 47(6):1099-1104 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect