A high-power AlGaN/GaN heterojunction field-effect transistor
| Autor: | Yoshida, Seikoh, Ishii, Hirotatsu, Li, Jiang, Wang, Deliang, Ichikawa, Masakazu |
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| Zdroj: | In Solid State Electronics 2003 47(3):589-592 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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| Autor: | Yoshida, Seikoh, Ishii, Hirotatsu, Li, Jiang, Wang, Deliang, Ichikawa, Masakazu |
|---|---|
| Zdroj: | In Solid State Electronics 2003 47(3):589-592 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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Full Text from ScienceDirect