Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress
| Autor: | Lee, Yi-Mu, Wu, Yider, Bae, Choelhwyi, Goo Hong, Joon, Lucovsky, Gerald |
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| Zdroj: | In Solid State Electronics 2003 47(1):71-76 |
| Databáze: | ScienceDirect |
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