Optical properties and defects in GaAsN and InGaAsN films and quantum well structures

Autor: Polyakov, A.Y, Smirnov, N.B, Govorkov, A.V, Botchkarev, A.E, Nelson, N.N, Fahmi, M.M.E, Griffin, J.A, Khan, A, Noor Mohammad, S, Johnstone, D.K, Bublik, V.T, Chsherbatchev, K.D, Voronova, M.I, Kasatochkin, V.S
Zdroj: In Solid State Electronics 2002 46(12):2147-2153
Databáze: ScienceDirect