GaAs/Ga 0.89In 0.11N 0.02As 0.98/GaAs NpN double heterojunction bipolar transistor with low turn-on voltage
| Autor: | Welty, R.J, Xin, H.P, Mochizuki, K, Tu, C.W, Asbeck, P.M |
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| Zdroj: | In Solid State Electronics 2002 46(1):1-5 |
| Databáze: | ScienceDirect |
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