N 2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD
| Autor: | Tan, C.S., Choi, W.K., Bera, L.K., Pey, K.L., Antoniadis, D.A., Fitzgerald, E.A., Currie, M.T., Maiti, C.K. |
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| Zdroj: | In Solid State Electronics 2001 45(11):1945-1949 |
| Databáze: | ScienceDirect |
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