A study of hot-carrier induced interface-trap profiles in lateral asymmetric channel MOSFETs using a novel charge pumping technique
| Autor: | Mahapatra, S, Rao, V.R, Vasi, J, Cheng, B, Woo, J.C.S |
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| Zdroj: | In Solid State Electronics 2001 45(10):1717-1723 |
| Databáze: | ScienceDirect |
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