On development of 6H-SiC LDMOS transistors using silane-ambient implant anneal
| Autor: | Sankin, I., Casady, J.B., Dufrene, J.B., Draper, W.A., Kretchmer, J., Vandersand, J., Kumar, V., Mazzola, M.S., Saddow, S.E. |
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| Zdroj: | In Solid State Electronics 2001 45(9):1653-1657 |
| Databáze: | ScienceDirect |
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