0.25 μm fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters

Autor:	Vanmackelberg, M *, Raynaud, C, Faynot, O, Pelloie, J.-L, Tabone, C, Grouillet, A, Martin, F, Dambrine, G, Picheta, L, Mackowiak, E, Llinares, P, Sevenhans, J, Compagne, E, Fletcher, G, Flandre, D, Dessard, V, Vanhoenacker, D, Raskin, J.-P
Zdroj:	In Solid State Electronics 2002 46(3):379-386
Databáze:	ScienceDirect
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect