Self-aligned process for emitter- and base-regrowth GaN HBTs and BJTs
| Autor: | Lee, K.P., Zhang, A.P., Dang, G., Ren, F. *, Han, J., Chu, S.N.G., Hobson, W.S., Lopata, J., Abernathy, C.R., Pearton, S.J., Lee, J.W. |
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| Zdroj: | In Solid State Electronics 2001 45(2):243-247 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect