Deep centers spectra and scanning electron microscope studies of p-GaN films prepared by metallorganic chemical vapor deposition on sapphire
Autor: | Polyakov, A.Y. *, Smirnov, N.B., Govorkov, A.V., Usikov, A.S., Shmidt, N.M., Lundin, W.V. |
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Zdroj: | In Solid State Electronics 2001 45(2):255-259 |
Databáze: | ScienceDirect |
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