Deep centers spectra and scanning electron microscope studies of p-GaN films prepared by metallorganic chemical vapor deposition on sapphire

Autor: Polyakov, A.Y. *, Smirnov, N.B., Govorkov, A.V., Usikov, A.S., Shmidt, N.M., Lundin, W.V.
Zdroj: In Solid State Electronics 2001 45(2):255-259
Databáze: ScienceDirect