Deep level effects on the characteristics of Al 0.24Ga 0.76As/In 0.20Ga 0.80As/GaAs and In 0.48Ga 0.52P/In 0.20Ga 0.80As/GaAs high electron mobility transistors grown by solid source molecular beam epitaxy

Autor: Yoon, S.F *, Yip, K.H, Zheng, H.Q, Gay, B.P
Zdroj: In Solid State Electronics 2000 44(11):1909-1916
Databáze: ScienceDirect
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