npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown C-doped GaAs in the base regions

Autor: Dang, G, Luo, B, Zhang, A.P, Cao, X.A, Ren, F *, Pearton, S.J, Cho, H, Hobson, W.S, Lopata, J, van Hove, J.M, Klaassen, J.J, Polley, C.J, Wowchack, A.M, Chow, P.P, King, D.J
Zdroj: In Solid State Electronics 2000 44(12):2097-2100
Databáze: ScienceDirect