npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown C-doped GaAs in the base regions
Autor: | Dang, G, Luo, B, Zhang, A.P, Cao, X.A, Ren, F *, Pearton, S.J, Cho, H, Hobson, W.S, Lopata, J, van Hove, J.M, Klaassen, J.J, Polley, C.J, Wowchack, A.M, Chow, P.P, King, D.J |
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Zdroj: | In Solid State Electronics 2000 44(12):2097-2100 |
Databáze: | ScienceDirect |
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