Effect of grain boundaries on hot-carrier induced degradation in large grain polysilicon thin-film transistors

Autor: Dimitriadis, C.A *, Kimura, M, Miyasaka, M, Inoue, S, Farmakis, F.V, Brini, J, Kamarinos, G
Zdroj: In Solid State Electronics 2000 44(11):2045-2051
Databáze: ScienceDirect