Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers

Autor: Zhang, A.P, Dang, G, Ren, F *, Han, J, Cho, H, Pearton, S.J, Chyi, J.-I, Nee, T.-E, Lee, C.M, Chuo, C.C, Chu, S.N.G
Zdroj: In Solid State Electronics 2000 44(7):1157-1161
Databáze: ScienceDirect