Graphene-based field-effect transistor using gated highest-k ferroelectric thin film

Autor: Alam, Injamul, Subudhi, Subhasri, Das, Sonali, Mandal, Manoranjan, Patra, Santosini, Sahu, Rashmirekha, Dash, Smaranika, Kumar, Pawan, Mahanandia, Pitamber
Zdroj: In Solid State Communications 1 October 2023 371
Databáze: ScienceDirect