Enhanced germanium precipitation and nanocrystal growth in the Ge+ ion-implanted SiO2 films during high-pressure annealing
| Autor: | Tyschenko, Ida E., Volodin, Vladimir A., Cherkov, Alexander G. |
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| Zdroj: | In Solid State Communications December 2016 247:53-57 |
| Databáze: | ScienceDirect |
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