Basic model of absorption depth and injection levels in silicon under intermediate illumination levels
| Autor: | Aharoni, Ran, Sinvani, Moshe, Tischler, Yaakov R., Zalevsky, Zeev |
|---|---|
| Zdroj: | In Optics Communications 15 March 2013 291:1-6 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect