Slow-trap profiling of NO and N 2O nitrided oxides grown on Si and SiC substrates

Autor:	Dimitrijev, Sima, Tanner, Philip *, Harrison, H.Barry
Zdroj:	In Microelectronics Reliability 1999 39(4):441-449
Databáze:	ScienceDirect
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect