Single transistor technique for interface trap density measurement in irradiated MOS devices
Autor: | Pershenkov, V.S *, Cherepko, S.V, Ivanov, R.E, Shalnov, A.V, Abramov, V.V |
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Zdroj: | In Microelectronics Reliability 1999 39(4):497-505 |
Databáze: | ScienceDirect |
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