Single transistor technique for interface trap density measurement in irradiated MOS devices
| Autor: | Pershenkov, V.S *, Cherepko, S.V, Ivanov, R.E, Shalnov, A.V, Abramov, V.V |
|---|---|
| Zdroj: | In Microelectronics Reliability 1999 39(4):497-505 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect