Synergistic effects of heating and biasing of AlGaN/GaN high electron mobility transistors: An in-situ transmission electron microscopy study
| Autor: | Al-Mamun, Nahid Sultan, Islam, Ahmad, Glavin, Nicholas, Haque, Aman, Wolfe, Douglas E., Ren, Fan, Pearton, Stephen |
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| Zdroj: | In Microelectronics Reliability September 2024 160 |
| Databáze: | ScienceDirect |
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