Double π-gate AlGaN/GaN HEMT with reduced surface and buffer traps and enhanced reliability
| Autor: | Venkateswarlu, Rayabarapu, Acharya, Bibhudendra, Mishra, Guru Prasad |
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| Zdroj: | In Microelectronics Reliability August 2024 159 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect