Field-plated and back-barrier engineered wide-bandgap III-nitride/β-Ga2O3 nano-HEMT for emerging RF/microwave micro/nanoelectronics applications
| Autor: | Rao, G. Purnachandra, Lenka, Trupti Ranjan, Nguyen, Hieu Pham Trung |
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| Zdroj: | In Microelectronics Reliability April 2024 155 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect