Over-voltage and cross-conduction hard switching stress on schottky gate-type p-GaN HEMT in half-bridge operation. Experimental and physical approaches
| Autor: | Ghizzo, L., Trémouilles, D., Richardeau, F., Vinnac, S., Jamin, F., Guibaud, G. |
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| Zdroj: | In Microelectronics Reliability November 2023 150 |
| Databáze: | ScienceDirect |
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