Failure degradation similarities on power SiC MOSFET devices submitted to short-circuit stress and accelerated switching conditions
| Autor: | Oliveira, J., Frey, P., Morel, H., Reynes, J.M., Burky, J., Coccetti, F., Iannuzzo, F., Piton, M. |
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| Zdroj: | In Microelectronics Reliability September 2023 148 |
| Databáze: | ScienceDirect |
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