Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress
| Autor: | Tan, H.T., Gao, Y., Syaranamual, G.J., Sasangka, W.A., Foo, S.C., Lee, K.H., Arulkumaran, S., Ng, G.I., Thompson, C.V., Gan, C.L. |
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| Zdroj: | In Microelectronics Reliability November 2023 150 |
| Databáze: | ScienceDirect |
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