Investigation of the time dependent gate dielectric stability in SiC MOSFETs with planar and trench gate structures
| Autor: | Lin, Wei-Cheng, Yu, Wei-Chen, Chen, Bang-Ren, Hsiao, Yu-Sheng, Huang, Zhen-Hong, Hung, Chia-Lung, Hsiao, Yi-Kai, Yeh, Nai-Jen, Kuo, Hao-Chung, Tu, Chang-Ching, Wu, Tian-Li |
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| Zdroj: | In Microelectronics Reliability November 2023 150 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect