SiC power MOSFET overload detection, short-circuit protection and gate-oxide integrity monitoring using a switched resistors dual-channel gate-driver
| Autor: | Picot-Digoix, M., Richardeau, F., Jouha, W., Blaquière, J.-M., Vinnac, S., Azzopardi, S., Le, T.-L. |
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| Zdroj: | In Microelectronics Reliability November 2023 150 |
| Databáze: | ScienceDirect |
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