Thermo-mechanical and metallurgical preliminary analysis of SiC MOSFET gate-damage mode under short-circuit based on a complete transient multiphysics 2D FEM
| Autor: | Shqair, M., Sarraute, E., Cazimajou, T., Richardeau, F. |
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| Zdroj: | In Microelectronics Reliability November 2023 150 |
| Databáze: | ScienceDirect |
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