Enhanced EBAC localization of gate oxide defects after high voltage electron beam irradiation
| Autor: | Ng, P.T., Rivai, F., Quah, A.C.T., Alag, J.C., Tan, P.K., Chen, C.Q. |
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| Zdroj: | In Microelectronics Reliability August 2023 147 |
| Databáze: | ScienceDirect |
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