Study of TID radiation effects on the breakdown voltage of buried P-pillar SOI LDMOSFETs with P-top region

Autor: Yu, Cheng-hao, Bao, Meng-tian, Guo, Hao-min, Hu, Hai-fan
Zdroj: In Microelectronics Reliability December 2022 139
Databáze: ScienceDirect