Study of TID radiation effects on the breakdown voltage of buried P-pillar SOI LDMOSFETs with P-top region
Autor: | Yu, Cheng-hao, Bao, Meng-tian, Guo, Hao-min, Hu, Hai-fan |
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Zdroj: | In Microelectronics Reliability December 2022 139 |
Databáze: | ScienceDirect |
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