Study of the influence of gate etching and passivation on current dispersion, trapping and reliability in RF 0.15 μm AlGaN/GaN HEMTs
| Autor: | Chiocchetta, F., De Santi, C., Rampazzo, F., Mukherjee, K., Grünenpütt, Jan, Sommer, Daniel, Blanck, Hervé, Lambert, Benoit, Gerosa, A., Meneghesso, G., Zanoni, E., Meneghini, M. |
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| Zdroj: | In Microelectronics Reliability November 2022 138 |
| Databáze: | ScienceDirect |
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